Izabella Grzegory - Selected Publications#

According to WoS s she is an author or co-author of 444 publications, cited more than 10 360 times, H = 49.

Melting of tetrahedrally bonded semiconductors: “anomaly” of the phase diagram of GaN? S.Porowski, ..., I.Grzegory, J. Crys. Growth 505, 5 (2019)

First Step in Exploration of Fe–Ga–N System for Efficient Crystallization of GaN at High N2 Pressure, P. Sadovyi, ..., I. Grzegory, Phys. Stat. Sol. A 215, 1700897 (2018)

Homoepitaxial growth of HVPE-GaN doped with Si, M. Iwinska, ..., I. Grzegory, M. Boćkowski, J. Crys. Growth 456, 91 (2016).

Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates, J. Domagała, ..., I. Grzegory, ..., J. Crys. Growth 456, 80 (2016).

The challenge of decomposition and melting of gallium nitride under high pressure and high temperature, S. Porowski, ..., I. Grzegory, ... J. Phys. Chem. Solids 85, 138 (2015).

Growth mechanisms in semipolar (20(2)over-bar1) and nonpolar m plane (10(1)over-bar0) AlGaN/GaN structures grown by PAMBE under N-rich conditions, M. Sawicka, ... I. Grzegory, I ..., J. Crys. Growth 415, 176 (2015).

Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds, M. Amilusik,..., I.Grzegory, J. Crys. Growth 403, 48 (2014)

True-blue laser diodes grown by plasma-assisted MBE on bulk GaN substrates, G. Muziol, ..., I. Grzegory, ..., Phys. Stat. Sol. C 11, 666 (2014).

Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed-seed configuration, I. Grzegory et al., J. Crys. Growth 350, 50 (2012).

Characterization of the Nonpolar GaN Substrate Obtained by Multistep Regrowth by Hydride Vapor Phase Epitaxy, H. Teisseyre, ..., I. Grzegory, Appl. Phys. Express 5, 011001 (2012).